Call for Papers

The Technical Program Committee of the 36th International Symposium on Power Semiconductor Devices and ICs invites you to submit abstracts for oral or poster presentations to the conference (download the call for papers here).

Topics of Interest include but are not limited to

  • Devices: Device Physics, Device Design, High Frequency Devices, High Power Devices, Smart Power Devices, Safe-Operating Area, Reliability, ESD
  • Materials: Si, SiC, GaN, AlN, Ga2O3, Diamond, GaAs
  • Power ICs: Isolation Techniques, SOI, Circuit Design, Device Technology, Energy Capability and SOA, Reliability, ESD, Power SoC, Monolithic vs. Hybrid
  • Processes: Process Integration, Lifetime Control, Passivation, Crystal Growth, III-V (Hetero)-Epitaxial Growth
  • Modelling/Simulation: Device and Circuit Simulation, Layout, Verification Tools,
  • Packaging: Novel Packaging Concepts, Power SiP, Stress and Thermal Analysis, Thermal Management
  • Applications: Hybrid Vehicles, Power Supplies, Computer and Telecom Power, Motor Drives, Utility


A PDF abstract (template download here) should be submitted including:

  • A single-page text summary in English (500 words maximum)
  • Up to two additional pages of supporting graphs and tables
  • The abstract heading must include: Title, Authors, Affiliations, Address, Phone, Fax, Email
  • The abstract must CLEARLY state: Purpose of work, how the work advances prior art, specific results and their significance, up-to-date references
  • Mark the papers eligibility for the Charitat Award (paper for which the first author is not more than 30 years of age at the time of the conference). To be eligible, the first author must also present the paper.
  • Select the appropriate conference track as listed below

Abstract submission here

Important Dates

  • The extended abstract submission deadline is DECEMBER 13, 2023 (11:59 PM CET)

  • Author notification will be sent out by 5 February 2024
  • Late news submission (full paper, limited acceptance) deadline is 8 March 2024
  • Final manuscripts must be submitted before 22 March 2024 (23:59 CET)

Conference Tracks

  • High Voltage Power Devices (HV): High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes
  • Low Voltage Power Devices and Power IC Technology (LVT): Low voltage silicon based discrete power devices (≤ 200 V) and power devices for power ICs of all voltage ranges
  • Power IC Design (ICD): Circuit design and demonstration using power IC technology platform
  • GaN and III/V Compound Materials (GaN): GaN and other III/V compound material (e.g. AlN, GaAs) based power devices, technology and integration, materials, and processing
  • SiC and Other Materials (SiC): SiC and other material (e.g. Ga2O3, diamond) based power devices, technology and integration, materials, and processing
  • Module and Package Technologies (PK): Package technology for modules, discrete power devices and power ICs


General Chair

Prof. Nando Kaminski (University of Bremen, Germany), Email:

Technical Program Committee Chair

Prof. Ulrike Grossner (ETH Zurich, Switzerland), Email: